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FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate

Brand Name Ti
Model Number FDMS86181
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details QFN8
Description N-Channel 100 V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
Unit Weight 0.003175 oz
Product Type MOSFET
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Configuration Single
Detailed Product Description

FDMS86181 Mosfet Power Transistor MOSFET 100V/20V N-Chnl Power Trench MOSFET

 

Features

  • Shielded Gate MOSFET Technology
  • MaxrDS(on) =4.2mΩat VGS =10V,ID =44A
  • MaxrDS(on) =12mΩat VGS =6V,ID =22A
  • ADD
  • 50%
  • lower Qrr than other MOSFET suppliers Lowers switching noise/EMI
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant

 

General Description

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

 

Applications

  • Primary DC-DC MOSFET
  • Synchronous Rectifier in DC-DC and AC-DC Motor Drive
  • Solar

Product Tags: p channel mosfet driver circuit   n channel mos field effect transistor  
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