FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

FDMS86181 N Channel Mosfet Transistor , Mosfet Motor Driver Circuit Shielded Gate

Brand Name	Ti
Model Number	FDMS86181
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	QFN8
Description	N-Channel 100 V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6)
Unit Weight	0.003175 oz
Product Type	MOSFET
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Configuration	Single

Detailed Product Description

FDMS86181 Mosfet Power Transistor MOSFET 100V/20V N-Chnl Power Trench MOSFET

Features

Shielded Gate MOSFET Technology
MaxrDS(on) =4.2mΩat VGS =10V,ID =44A
MaxrDS(on) =12mΩat VGS =6V,ID =22A
ADD
50%
lower Qrr than other MOSFET suppliers Lowers switching noise/EMI
MSL1 robust package design
100% UIL tested
RoHS Compliant

General Description

This N-Channel MV MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.

Applications

Primary DC-DC MOSFET
Synchronous Rectifier in DC-DC and AC-DC Motor Drive
Solar

Product Tags: p channel mosfet driver circuit n channel mos field effect transistor

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