FDMS6681Z P Channel Mosfet Driver Circuit , Power Switching Transistor PowerTrench

FDMS6681Z Mosfet Power Transistor MOSFET -30V P-Channel PowerTrench

Features

• Max rDS(on) = 3.2 mΩ at VGS = -10 V, ID = -21.1 A
• MaxrDS(on) =5.0mΩatVGS =-4.5V,ID =-15.7A

• Advanced Package and Silicon combination for low rDS(on)

• HBM ESD Protection Level of 8kV Typical(Note 3)

• MSL1 Robust Package Design

• RoHS Compliant

General Description

The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Applications

• Load Switch in Notebook and Server
• Notebook Battery Pack Power Management

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