China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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high power igbt module

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
View Contact Details
421 - 430 of 1874

high power igbt module

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...High PSRR Low Dropout Linear Regulator Main Features 2.1 USB Features • Fully compliant with USB 2.0 full speed Specifications • Supports 12-Mbps ... 2024-12-09 22:38:25
... 0.15 kbps to 64 kbps, ASK 2.3 V to 3.6 V power supply Programmable output power −20 dBm to +13 dBm in 63 steps Receiver sensitivity −119 dBm at 1 ... 2024-12-09 22:38:38
...Power Line SMD SLF7045T-101MR50-PF Inductors For Power Line SMD FEATURES • The SLF series are characterized by low profile, low DC resistance, and ... 2024-12-09 22:38:38
CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse ... 2024-12-09 22:38:38
... Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's ... 2024-12-09 22:38:51
... Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's ... 2024-12-09 22:41:27
N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology ... 2024-12-09 22:41:27
...power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is ... 2024-12-09 22:41:27
...Load switch • Battery protection • Power management Features • 0.9 A, 20 V RDS(ON) = 220 mΩ @ VGS = 4.5 V RDS(ON) = 300 mΩ @ VGS = 2.5 V • Low gate ... 2024-12-09 22:41:27
...high voltage PowerTrench process. It has been optimized for power management applications. Applications • Load switch • Battery protection • Power ... 2024-12-09 22:41:27
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