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20V N-Channel PowerTrench Power Mosfet Transistor FDV305N

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City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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20V N-Channel PowerTrench Power Mosfet Transistor FDV305N

Brand Name FAIRCHILD
Model Number FDV305N
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 5pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 290PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description N-Channel 20 V 900mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Drain-Source Voltage 20 V
Gate-Source Voltage ± 12 V
Maximum Power Dissipation 0.35 W
Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Resistance, Junction-to-Ambient 357 °C/W
Detailed Product Description

FDV305N

20V N-Channel PowerTrench MOSFET

 

General Description

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

 

Applications                                    

• Load switch

• Battery protection

• Power management

 

Features

• 0.9 A, 20 V

RDS(ON) = 220 mΩ @ VGS = 4.5 V

RDS(ON) = 300 mΩ @ VGS = 2.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

 

 

Absolute Maximum Ratings

Symbol Parameter Ratings Units
VDSSDrain-Source Voltage  20 V
VGSS Gate-Source Voltage ± 12 V
ID

Drain Current – Continuous 0.9 A

                       – Pulsed

0.9

2

A
PMaximum Power Dissipation 0.35W

 

Product Tags: power mosfet ic   multi emitter transistor  
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