20V Power Mosfet Transistor N-Channel PowerTrench MOSFET FDV305N

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	FAIRCHILD
Model Number	FDV305N
Certification	Original Factory Pack
Place of Origin	Original
Minimum Order Quantity	5pcs
Price	Negotiation
Payment Terms	T/T, Western Union,PayPal
Supply Ability	290PCS
Delivery Time	1 Day
Packaging Details	please contact me for details
Description	N-Channel 20 V 900mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Drain-Source Voltage	20 V
Gate-Source Voltage	± 12 V
Maximum Power Dissipation	0.35 W
Input current	±5 mA
Operating and Storage Junction Temperature Range	–55 to +150 °C

Detailed Product Description

FDV305N 20V N-Channel PowerTrench MOSFET

General Description

This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Applications

• Load switch

• Battery protection

• Power management

Features

• 0.9 A, 20 V

RDS(ON) = 220 mΩ @ VGS = 4.5 V

RDS(ON) = 300 mΩ @ VGS = 2.5 V

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely low RDS(ON)

Absolute Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	20	V
V_GSS	Gate-Source Voltage	± 12	V
I_D	Drain Current – Continuous – Pulsed	0.9 2	A
P_D	Maximum Power Dissipation	0.35	W
T_J, T_STG	Operating and Storage Junction Temperature Range	–55 to +150	°C

Product Tags: multi emitter transistor silicon power transistors

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