4951 - 4960 of 5440
chip in electronics
Selling leads
IRLL110, SiHLL110 Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration ...
2024-12-09 22:38:51
|
BTA24, BTB24, BTA25 BTA26, BTB26, T25 25 A standard and Snubberless™ triacs Features ■ High current triac ■ Low thermal resistance with clip bonding ■ ...
2024-12-09 22:38:51
|
TN12, TS12 and TYNx12 Series SENSITIVE & STANDARD 12A SCRS Main Features Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA ...
2024-12-09 22:38:51
|
AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide ...
2024-12-09 22:38:51
|
2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier ...
2024-12-09 22:38:51
|
NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and ...
2024-12-09 22:38:51
|
AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS...
2024-12-09 22:38:51
|
BUK95/9608-55A TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ ...
2024-12-09 22:38:51
|
BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector ...
2024-12-09 22:38:51
|
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V ...
2024-12-09 22:38:51
|