China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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4951 - 4960 of 5440

chip in electronics

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IRLL110, SiHLL110 Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration ... 2024-12-09 22:38:51
BTA24, BTB24, BTA25 BTA26, BTB26, T25 25 A standard and Snubberless™ triacs Features ■ High current triac ■ Low thermal resistance with clip bonding ■ ... 2024-12-09 22:38:51
TN12, TS12 and TYNx12 Series SENSITIVE & STANDARD 12A SCRS Main Features Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA ... 2024-12-09 22:38:51
AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide ... 2024-12-09 22:38:51
2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier ... 2024-12-09 22:38:51
NPN switching transistors 2N2222; 2N2222A FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • Linear amplification and ... 2024-12-09 22:38:51
AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS... 2024-12-09 22:38:51
BUK95/9608-55A TrenchMOS™ logic level FET Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ ... 2024-12-09 22:38:51
BCP54 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switching circuits requiring collector ... 2024-12-09 22:38:51
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V ... 2024-12-09 22:38:51
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