161 - 170 of 185
300v npn silicon transistor
Selling leads
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IRF640NPbF IRF640NSPbF IRF640NLPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching ...
2024-12-09 22:38:51
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IRLL024NPbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche ...
2024-12-09 22:38:51
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IRF7601 HEXFET® Power MOSFET • Generation V Technology • Ultra Low On-Resistance • N-Channel MOSFET • Very Small SOIC Package • Low Profile (...
2024-12-09 22:41:27
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IRFR/U9120N HEXFET® Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount (IRFR9120N) • Straight Lead (IRFU9120N) • Advanced Process ...
2024-12-09 22:41:27
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IRFP260NPbF HEXFET® Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche ...
2024-12-09 22:41:27
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Switching (200V, 10A) RDN100N20 Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. ...
2024-12-09 22:41:27
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GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and ...
2024-12-09 22:41:27
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BTA40, BTA41 and BTB41 Series 40A TRIACS Main Features Symbol Value Unit IT(RMS) 40 A VDRM/VRRM 600 and 800 V IGT (Q1) 50 mA DESCRIPTION Available in ...
2024-12-09 22:38:38
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FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free ...
2024-12-09 22:38:38
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Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • 150o C Junction Temperature • Through ...
2024-12-09 22:38:38
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