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300v npn silicon transistor
Selling leads
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... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
2024-12-09 22:37:47
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...Power MOSFET 55V 98A TO-220 MOSFET Transistors Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing ...
2024-12-09 22:37:47
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...Transistor general purpose mosfet ►Advanced Process ►Technology Ultra Low On-Resistance ►Dynamic dv/dt Rating 175°C ►Operating Temperature ►Fast ...
2024-12-09 22:38:38
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...Transistor Flash Ic Integrated circuit Chip IC Electronics Power MOSFET Output Features: l Advanced Process Technology l Dynamic dv/dt Rating l 175...
2024-12-09 22:38:38
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... Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on...
2024-12-09 22:38:38
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
2024-12-09 22:38:38
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IRF9540, RF1S9540SM 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. ...
2024-12-09 22:38:38
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2SK1582(G15) Power Mosfet Transistor Electronics Components Chip IC Electronics Silicon P Channel MOS FET Description Low frequency power amplifier ...
2024-12-09 22:41:27
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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ...
2024-12-09 22:41:27
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... Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer ...
2024-12-09 22:41:27
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