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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

Model Number BTA40-600B
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 7600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description TRIAC Standard 600 V 40 A Chassis Mount RD91
Storage junction temperature range - 40 to + 150°C
Operating junction temperature range - 40 to + 125°C
Average gate power dissipation 1 W
Peak gate current 8 A
Threshold voltage 0.85 V
Dynamic resistance 10 mΩ
Detailed Product Description

 
BTA40, BTA41 and BTB41 Series
40A TRIACS
 
Main Features

SymbolValueUnit
IT(RMS)40A
VDRM/VRRM600 and 800V
IGT (Q1)50mA

 
DESCRIPTION
Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...
Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734).
 
Absolute Maximum Ratings

SymbolParameterValueUnit
IT(RMS)RMS on-state current (full sine wave)RD91 / TOP3Tc = 95°C40A
TOP Ins.Tc = 80°C
ITSMNon repetitive surge peak on-state current (full cycle, Tj initial = 25°C)F = 50 Hzt = 20 ms400A
F = 60 Hzt = 16.7 ms420
I² tI² t Value for fusing

      tp = 10 ms

880A² s
dI/dtCritical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 nsF = 120 HzTj = 125°C50A/µs
VDSM/VRSMNon repetitive surge peak off-state voltagetp = 10 msTj = 25°C

VDSM/VRSM

+ 100

V
IGMPeak gate currenttp = 20 µsTj = 125°C8A
PG(AV)Average gate power dissipationTj = 125°C1W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

 

 
TOP3 (Insulated and non insulated) Package Mechanical Data

 
RD91 Package Mechanical Data

 
 
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Product Tags: thyristor diode module   low voltage power mosfet  
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