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sth150n10f7 2 mosfet power transistor
Selling leads
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... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ...
2024-12-09 12:29:15
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... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ...
2024-12-09 18:59:29
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... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 12:12:55
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... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 18:59:29
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....on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock PART ...
2024-12-09 12:12:55
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...%typ.on HF Band APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. List Of Other Electronic Components In Stock ...
2024-12-09 18:59:29
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...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for ...
2024-12-09 12:12:55
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...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for ...
2024-12-09 18:59:29
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... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, ...
2024-12-09 18:59:29
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MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance ...
2024-12-09 18:59:29
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