High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF
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Detailed Product Description
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BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A
600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band
Feature
1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to 128 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Application
Industrial, scientific and medical applications Broadcast transmitter applications
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| Product Tags: high power mosfet transistors n channel transistor | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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