MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode
Lateral MOSFETs
Features
• Characterized with Series Equivalent Large--Signal Impedance
Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Designed primarily for CW large--signal output and driver
applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable
for use in
industrial, medical and scientific applications.
| Manufacturer | USA Inc. | |
|---|
| Series | - | |
|---|
| Packaging | Tape & Reel (TR) | |
|---|
| Part Status | Not For New Designs | |
|---|
| Transistor Type | LDMOS | |
|---|
| Frequency | 220MHz | |
|---|
| Gain | 25dB | |
|---|
| Voltage - Test | 50V | |
|---|
| Current Rating | - | |
|---|
| Noise Figure | - | |
|---|
| Current - Test | 450mA | |
|---|
| Power - Output | 150W | |
|---|
| Voltage - Rated | 110V | |
|---|
| Package / Case | TO-272BB | |
|---|
| Supplier Device Package | TO-272 WB-4 | |
|---|
| Base Part Number | MRF6V2150 |
|---|
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