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sth150n10f7 2 mosfet power transistor
Selling leads
PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat ...
2024-12-09 18:59:29
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...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG...
2024-12-09 12:12:55
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...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG...
2024-12-09 18:59:29
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...MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central ...
2024-12-09 18:59:29
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...MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated ...
2024-12-09 18:59:29
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IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize ...
2024-12-09 12:31:15
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IRF3205PBF N-Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize ...
2024-12-09 18:59:29
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IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating ...
2024-12-09 12:31:15
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IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating ...
2024-12-09 18:59:29
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IRFP4227 200V 65A N CHANNEL MOSFET TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, ...
2024-12-09 18:59:29
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