China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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600V IRFPC50PBF Mosfet Power Transistor Through Hole TO-247-3

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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600V IRFPC50PBF Mosfet Power Transistor Through Hole TO-247-3

Brand Name IR
Model Number IRFPC50PBF
Certification CE
Place of Origin CN
Minimum Order Quantity 30 pieces
Price negotiable
Payment Terms T/T, Western Union, Paypal
Supply Ability 10Kpcs per year
Delivery Time 1-2 working days
Packaging Details Plastic Tubes
Goods Condition Brand New
Part Status Active
Lead Free / Rohs Complaint
Function MOSFET
Mounting Type Through Hole
Package TO247
Detailed Product Description

IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3
 
 
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
 
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications
 

ManufacturerVishay Siliconix 
Series- 
PackagingTube 
Part StatusActive 
FET TypeN-Channel 
TechnologyMOSFET (Metal Oxide) 
Drain to Source Voltage (Vdss)600V 
Current - Continuous Drain (Id) @ 25°C11A (Tc) 
Drive Voltage (Max Rds On, Min Rds On)10V 
Vgs(th) (Max) @ Id4V @ 250µA 
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V 
Vgs (Max)±20V 
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 25V 
FET Feature- 
Power Dissipation (Max)180W (Tc) 
Rds On (Max) @ Id, Vgs600 mOhm @ 6A, 10V 
Operating Temperature-55°C ~ 150°C (TJ) 
Mounting TypeThrough Hole 
Supplier Device PackageTO-247-3 
Package / CaseTO-247-3

 
 

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Product Tags: high power mosfet transistors   n channel transistor  
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