IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc)
Through Hole TO-247-3
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness. The TO-247
package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage
distance between pins to meet the requirements of most safety
specifications
Manufacturer | Vishay Siliconix | |
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Series | - | |
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Packaging | Tube | |
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Part Status | Active | |
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FET Type | N-Channel | |
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Technology | MOSFET (Metal Oxide) | |
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Drain to Source Voltage (Vdss) | 600V | |
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Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
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Drive Voltage (Max Rds On, Min Rds On) | 10V | |
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Vgs(th) (Max) @ Id | 4V @ 250µA | |
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Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V | |
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Vgs (Max) | ±20V | |
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Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V | |
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FET Feature | - | |
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Power Dissipation (Max) | 180W (Tc) | |
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Rds On (Max) @ Id, Vgs | 600 mOhm @ 6A, 10V | |
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Operating Temperature | -55°C ~ 150°C (TJ) | |
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Mounting Type | Through Hole | |
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Supplier Device Package | TO-247-3 | |
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Package / Case | TO-247-3 |
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