31 - 40 of 71
sth150n10f7 2 mosfet power transistor
Selling leads
|
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 12:12:55
|
|
|
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ...
2024-12-09 18:59:29
|
|
...MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
2024-12-09 18:59:29
|
|
IRFR024NTRPBF D-PAK N-Channel 55V 17A 45W Surface Mount RoHS Compliant Feature l Ultra Low On-Resistance l Surface Mount (IRFR024N) l Straight Lead ...
2024-12-09 18:59:29
|
|
STH150N10F7-2 N-Channel MOSFET Transistor List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND AD96685BH ADI HFCT...
2024-12-09 17:18:52
|
|
|
STH150N10F7-2 N-Channel MOSFET Transistor List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND AD96685BH ADI HFCT...
2024-12-09 18:59:29
|
|
... in the 440- to 520-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ...
2024-12-09 18:59:29
|
|
...MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 450-MHz range. The battery can be connected directly to the drain ...
2024-12-09 18:59:29
|
|
...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize ...
2024-12-09 18:59:29
|
|
RA45H8994M1-101 896-941MHz 45W 12.8V, 2 Stage Amp. RF transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module ...
2024-12-09 18:59:29
|