80W MRF173 High Power Transistor 28V High Efficiency CASE 211–11 Package
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Detailed Product Description
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MRF173 N-Channel Enhancement Mode MOSFETs RF Power Transistor
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands.
1, Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) 2, Low Thermal Resistance • Ruggedness Tested at Rated Output Power 3, Nitride Passivated Die for Enhanced Reliability 4, Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz 5, Excellent Thermal Stability; Suited for Class A Operation
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| Product Tags: n channel mosfet transistor n channel transistor | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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