IRFP4227 200V 65A N CHANNEL MOSFET TRANSISTOR TO-247AC IRFP4227PBF
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass
Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,
Energy Recovery and Pass Switch
Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching 175°C Operating
Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
| Manufacturer | Infineon Technologies | |
|---|
| Series | HEXFET® | |
|---|
| Packaging | Tube | |
|---|
| Part Status | Active | |
|---|
| FET Type | N-Channel | |
|---|
| Technology | MOSFET (Metal Oxide) | |
|---|
| Drain to Source Voltage (Vdss) | 200V | |
|---|
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) | |
|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
|---|
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
|---|
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V | |
|---|
| Vgs (Max) | ±30V | |
|---|
| Input Capacitance (Ciss) (Max) @ Vds | 4600pF @ 25V | |
|---|
| FET Feature | - | |
|---|
| Power Dissipation (Max) | 330W (Tc) | |
|---|
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 46A, 10V | |
|---|
| Operating Temperature | -40°C ~ 175°C (TJ) | |
|---|
| Mounting Type | Through Hole | |
|---|
| Supplier Device Package | TO-247AC | |
|---|
| Package / Case | TO-247-3 |
|---|
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