China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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mosfet power transistor

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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mosfet power transistor

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CLA50E1200HB High Efficiency Thyristor for for line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ... 2024-12-09 18:59:29
PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat ... 2024-12-09 18:59:29
IRFP4227 200V 65A N CHANNEL MOSFET TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, ... 2024-12-09 18:59:29
M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND   ... 2024-12-09 18:59:29
IRFPC60PBF MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • ... 2024-12-09 18:59:29
IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • ... 2024-12-09 18:59:29
MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4 Designed for broadcast and commercial aerospace broadband applications with ... 2024-12-09 18:59:29
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance ... 2024-12-09 18:59:29
R45H4045MR-101 400-450MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4045MR is a 45-watt RF MOSFET Amplifier Module for 12.5-volt ... 2024-12-09 18:59:29
MRFE6VP5300NR1 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 27dB 300W TO-270 WB-4 High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ... 2024-12-09 18:59:29
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