China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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mosfet power transistor

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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mosfet power transistor

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MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial ... 2024-12-09 18:59:29
MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial ... 2024-12-09 18:59:29
MRF173 N-Channel Enhancement Mode MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency ... 2024-12-09 18:59:29
BLF174XR RF Mosfet LDMOS (Dual), Common Source 50V 100mA 108MHz 28.5dB 600W SOT1214A 600 W extremely rugged LDMOS power transistor for broadcast and ... 2024-12-09 18:59:29
RA30H1317M Power Mosfet Transistor for Mobile Radio use 135-175MHz 30W 12.5V DESCRIPTION The RA30H1317M is a 30-watt RF MOSFET Amplifier Module for 12... 2024-12-09 18:59:29
RA03M8087M-101 806-870MHz 3.6W 7.2V, 2 Stage Amp. RF Power Transistor For PORTABLE RADIO Description The RA03M8087M is a 3.6-watt RF MOSFET Amplifier ... 2024-12-09 18:59:29
RA45H8994M1-101 896-941MHz 45W 12.8V, 2 Stage Amp. RF transistor For MOBILE RADIO DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module ... 2024-12-09 18:59:29
RA60H4452M1-101 440-520MHz 60W 12.5V, 2 Stage Amp. Power Transistor For MOBILE RADIO DESCRIPTION The RA60H4452M1 is a 60-watt RF MOSFET Amplifier ... 2024-12-09 18:59:29
MRF151G RF Power Field-Effect Transistor 500W, 50V, 175MHz N-Channel Broadband MOSFET replacement for BLF278 Features 1, Guaranteed Performance at 175 ... 2024-12-09 18:59:29
FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard ... 2024-12-09 18:59:29
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