231 - 240 of 422
power switch transistor
Selling leads
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 21:52:33
|
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 21:52:33
|
|
... to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for ...
2024-12-09 18:42:28
|
|
... RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side ...
2024-12-09 18:42:28
|
|
|
... to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for ...
2024-12-09 21:52:33
|
|
|
... RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance. This device is ideally suited for use as a low side ...
2024-12-09 21:52:33
|
|
...POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching ...
2024-12-09 18:45:20
|
|
|
...POWER MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching ...
2024-12-09 21:52:33
|
|
...(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery protection Load switch Power management Package Marking and ...
2024-12-09 18:42:28
|
|
...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS...
2024-12-09 18:42:28
|