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power switch transistor
Selling leads
...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE High power and current handing capability Lead free product is acquired Surface mount package ...
2024-12-09 18:42:28
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... A VDSS=20v RDS(on)
2024-12-09 18:42:28
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... A VDSS=20v RDS(on)
2024-12-09 18:42:28
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...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE High power and current handing capability Lead free product is acquired Surface mount package ...
2024-12-09 21:52:33
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... A VDSS=20v RDS(on)
2024-12-09 21:52:33
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... A VDSS=20v RDS(on)
2024-12-09 21:52:33
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...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent ...
2024-12-09 18:45:55
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...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent ...
2024-12-09 21:52:33
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...Transistors MMBTA55 TRANSISTOR (NPN) FEATURE l Driver Transistors Marking :2H MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter ...
2024-12-09 18:42:28
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..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to ...
2024-12-09 18:50:53
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