P Channel Enhancement Mode Mosfet Power Transistor 60P03D TO-252 30V

P Channel Enhancement Mode Mosfet Power Transistor 60P03D TO-252 30V

Mosfet Power Transistor  DESCRIPTION

The AP60P03D uses advanced trench technology
and design to provide excellent R DS(ON) with low
gate charge .Thisdevice is well suited
for high current load applications.

Mosfet Power Transistor  GENERAL FEATURES

V DS =-30V,I D =-60A
R DS(ON) <15mΩ @ V GS =-10V
R DS(ON) <20mΩ @ V GS =-4.5V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E AS
Excellent package for good heat dissipation

Mosfet Power Transistor Application

High side switch for full bridge converter
DC/DC converter for LCD display

Package Marking and Ordering Information

ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in 2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

DFN5X6-8 Package Information