151 - 160 of 294
mosfet driver using transistor
Selling leads
|
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ...
2024-12-09 21:52:33
|
|
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
|
|
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ...
2024-12-09 18:42:28
|
|
|
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ...
2024-12-09 21:52:33
|
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 18:45:20
|
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 18:45:20
|
|
...MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate ...
2024-12-09 18:45:20
|
|
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 21:52:33
|
|
|
...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed ...
2024-12-09 21:52:33
|
|
|
...MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate ...
2024-12-09 21:52:33
|