China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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mosfet driver using transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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mosfet driver using transistor

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AOD442G 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide ... 2024-12-09 21:52:33
...transistor mosfet alternative for AP6982GN2-HF Description: AP6982 series are from Advanced Power innovated design and silicon process technology ... 2024-12-09 21:52:33
MOSFET Transistor AP2N1K2EN1 Original Electronic Component / IC Chips Description AP2N1K2E series are from Advanced Power innovated design and silicon ... 2024-12-09 21:52:33
...t have been developed and addressed by different manufacturers. They use a number of different techniques that enable the power MOSFETs to carry ... 2024-12-09 21:52:33
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme... 2024-12-09 18:42:28
AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC ... 2024-12-09 19:03:13
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme... 2024-12-09 21:52:33
AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC ... 2024-12-09 21:52:33
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ... 2024-12-09 18:42:28
HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ... 2024-12-09 18:45:20
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