Shenzhen Hua Xuan Yang Electronics Co.,Ltd: Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

Home > Products > Mosfet Power Transistor >

G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

Brand Name	Hua Xuan Yang
Model Number	AP6982GN2-HF
Certification	RoHS、SGS
Place of Origin	Shenzhen, China
Minimum Order Quantity	Negotiation
Price	Negotiation
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Type	Field-Effect Transistor
Product name	AP6982GN2-HF
Quality	Original
Application	home appliances
Logo	Customized
Vth:	0.7V

Detailed Product Description

G2012 20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF

Description:

AP6982 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Continuous Drain Current³ @ V_GS=4.5V	11	A
I_D@T_A=70℃	Continuous Drain Current³ @ V_GS=4.5V	8.7	A
IDM	Pulsed Drain Current¹	40	A
P_D@T_A=25℃	Total Power Dissipation³	2.4	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	52	℃/W

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=10A	-	9.3	12.5	mΩ
		V_GS=2.5V, I_D=5A	-	11.3	16	mΩ
		V_GS=1.8V, I_D=2A	-	15	21	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.3	0.5	1	V
gfs	Forward Transconductance	V_DS=5V, I_D=10A	-	34	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+100	nA
Q_g	Total Gate Charge	I_D=10A V_DS=10V V_GS=4.5V	-	22	35.2	nC
Qgs	Gate-Source Charge		-	2.5	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	7	-	nC
td(on)	Turn-on Delay Time	V_DS=10V	-	9	-	ns
t_r	Rise Time	I_D=1A	-	13	-	ns
td(off)	Turn-off Delay Time	R_G=3.3Ω	-	40	-	ns
t_f	Fall Time	V_GS=5V	-	10	-	ns
t_f	Fall Time		-	10	-	ns
Ciss	Input Capacitance	V_GS=0V V_DS=10V f=1.0MHz	-	1500	2400	pF
Coss	Output Capacitance		-	170	-	pF
Crss	Reverse Transfer Capacitance		-	155	-	pF
R_g	Gate Resistance	f=1.0MHz	-	2	4	Ω

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=2A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time	I_S=10A, V_GS=0V, dI/dt=100A/µs	-	11	-	ns
Qrr	Reverse Recovery Charge	I_S=10A, V_GS=0V, dI/dt=100A/µs	-	5	-	nC

Notes:

1. Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in² 2oz copper pad of FR4 board, t < 10s ; 165^oC/W when mounted on min. copper pad.

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

Product Tags: 2.4W Transistor Mosfet Module 10mr Transistor Mosfet Module AP6982GN2-HF Field Effect Transistor

Related Products

AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator for sale


From:	Enter your Email please. Your email is incorrect!
To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Subject:	Subject is empty!
Message:	Characters Remaining: (80/3000) Please enter 20 to 3000 characters to contact this supplier!

G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

1. Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in² 2oz copper pad of FR4 board, t < 10s ; 165^oC/W when mounted on min. copper pad.

AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

1. Pulse width limited by Max. junction temperature.2.Pulse test3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad.

AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition

1. Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in² 2oz copper pad of FR4 board, t < 10s ; 165^oC/W when mounted on min. copper pad.