China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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mosfet driver using transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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Mr.David Lee
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mosfet driver using transistor

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...le retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. Product Summary Absolute ... 2024-12-09 21:52:33
12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ... 2024-12-09 21:52:33
5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate ... 2024-12-09 21:52:33
5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate ... 2024-12-09 21:52:33
...Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON... 2024-12-09 19:11:03
...Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON... 2024-12-09 21:52:33
WST3078 N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide ... 2024-12-09 18:42:28
SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS... 2024-12-09 18:42:28
HXY2301-2.3A Mosfet Power Transistor Description 2024-12-09 18:44:10
HXY2301-2.8A Mosfet Power Transistor Description 2024-12-09 18:44:10
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