WST3078 High Current Transistor , Power Switch Transistor High Cell Density
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Detailed Product Description
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WST3078 N&P-Ch MOSFET
Description
The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications.
The WST3078 meet the RoHS and Green Product requirement with full function reliability approved.
Features
Applications
Absolute Maximum Ratings
Thermal Data N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted) Drain-Source Body Diode Characteristics Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with
2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2% 3. The power dissipation is limited by 150℃ junction temperature 4. The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise
noted) Drain-Source Body Diode Characteristics Note : 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦
2% 3. The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real
applications , should be limited by total power dissipation. N-Channel Typical Characteristics P-Channel Typical Characteristics |
| Product Tags: n channel mosfet transistor high voltage transistor |
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