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high voltage switching diode
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...provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of ...
2024-12-09 21:52:33
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... shifted high side switch, and for a host ofother applications. N-CH Electrical Characteristics (TA=25℃unless otherwise noted) A. The value of RθJA ...
2024-12-09 21:52:33
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... Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification ...
2024-12-09 21:52:33
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...technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS andgeneral purpose applications. ...
2024-12-09 21:52:33
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...voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS...
2024-12-09 18:42:28
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...Switching Application MARKING 2N5551=Device code Solid dot=Green molding compound device, if none,the normal device Z=Rank of hFE ORDERING ...
2024-12-09 18:42:28
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...switching and Amplifier applications Ÿ As complementary type, the NPN transistor 2N3904 is Recommended Ÿ This transistor is also available in the ...
2024-12-09 18:42:28
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...Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part ...
2024-12-09 18:42:28
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... Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as ...
2024-12-09 18:42:28
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... Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as ...
2024-12-09 18:42:28
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