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high voltage switching diode
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...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS...
2024-12-09 18:42:28
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...form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P...
2024-12-09 18:42:28
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...form a level shifted high side switch, and for a host of other applications General Features N-channel P-channel N-Channel VDS = 30V,ID =6.5A RDS...
2024-12-09 21:52:33
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...form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =10A RDS(ON) < 16m Ω@ VGS=10V P...
2024-12-09 21:52:33
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...switching applications MARKING 13001=Device code S 6B=Code ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 ...
2024-12-09 18:42:28
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...switching applications MARKING 13001=Device code S 6B=Code ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 3DD13001B TO-92 ...
2024-12-09 21:52:33
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...provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of ...
2024-12-09 18:42:28
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... shifted high side switch, and for a host ofother applications. N-CH Electrical Characteristics (TA=25℃unless otherwise noted) A. The value of RθJA ...
2024-12-09 18:42:28
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... Gate Charge x RDS(ON) Product (FOM) • RoHS and Halogen-Free Compliant Applications • High Frequency Switching and Synchronous Rectification ...
2024-12-09 18:42:28
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...technology toprovide excellent RDS(ON) with low gate charge.This device is suitable for high side switch in SMPS andgeneral purpose applications. ...
2024-12-09 18:42:28
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