China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
7
Home > Products > Tip Power Transistors >

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
View Contact Details

3DD13001B NPN Tip Power Transistors TO-92 Plastic Encapsulated VCEO 420V

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number 3DD13001B
PC 0.75W
VCEO 420V
VCBO 600V
Product name semiconductor triode type
Tj 150℃
Type Triode Transistor
Detailed Product Description

TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN)

 

FEATURE
 

Ÿ power switching applications

 

 

MARKING

13001=Device code

S 6B=Code

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
3DD13001BTO-92Bulk1000pcs/Bag
3DD13001B-TATO-92Tape2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolParameterValueUnit
VCBOCollector -Base Voltage600V
VCEOCollector-Emitter Voltage420V
VEBOEmitter-Base Voltage7V
ICCollector Current -Continuous0.2A
PCCollector Power Dissipation0.75W
TJJunction Temperature150
TstgStorage Temperature-55 ~150

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 100μA , IE=0600  V
Collector-emitter breakdown voltageV(BR)CEOIC= 1mA , IB=0400  V
Emitter-base breakdown voltageV(BR)EBOIE= 100μA, IC=07  V
Collector cut-off currentICBOVCB= 600V , IE=0  100μA
Collector cut-off currentICEOVCE= 400V, IB=0  200μA
Emitter cut-off currentIEBOVEB=7V, IC=0  100μA

 

DC current gain

hFE(1)VCE= 20V, IC= 20mA14 29 
 hFE(2)VCE= 10V, IC= 0.25 mA5   
Collector-emitter saturation voltageVCE(sat)IC= 50mA, IB= 10 mA  0.5V
Base-emitter saturation voltageVBE(sat)IC= 50 mA, IB= 10mA  1.2V
Transition frequencyfT

VCE= 20V, IC=20mA

f = 1MHz

8  MHz
Fall timetf

 

IC=50mA, IB1=-IB2=5mA, VCC=45V

  0.3μs
Storage timetS   1.5μs

 
  

CLASSIFICATION OF hFE(2)

Range14-1717-2020-2323-2626-29

 

 

 

 

TO-92 Package Outline Dimensions

 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
Φ 1.600 0.063
h0.0000.3800.0000.015

 

 

 

 

Product Tags: tip pnp transistor   tip series transistors  
Related Products
Email to this supplier
 
From:
Enter your Email please.
To: Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Subject:
Message:
Characters Remaining: (80/3000)