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high power zener diode
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device ...
2024-12-09 18:42:28
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AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ...
2024-12-09 19:03:13
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ...
2024-12-09 21:52:33
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TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device ...
2024-12-09 21:52:33
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RS2A THRU RS2M SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -2.0 Ampere FEATURE The plastic package ...
2024-12-09 18:42:28
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RS2A THRU RS2M SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current -2.0 Ampere FEATURE The plastic package ...
2024-12-09 21:52:33
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
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...High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 18:42:28
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