China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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D965 NPN Transistor Circuit , NPN Power Transistor High Performance 

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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D965 NPN Transistor Circuit , NPN Power Transistor High Performance 

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number D965
VCBO 42V
VCEO 22V
VEBO 6V
Product name semiconductor triode type
Collector Power Dissipation 750mW
Tj 150Š
Detailed Product Description

TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)

 

 

FEATURE

Ÿ Audio Amplifier

Ÿ Flash Unit of Camera

Ÿ Switching Circuit

 

 

MARKING

 

D965=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

 

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
D965TO-92Bulk1000pcs/Bag
D965-TATO-92Tape2000pcs/Box


 

 

 

 

MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)

 

SymbolPara meterValueUnit
VCBOCollector-Base Voltage42V
VCEOCollector-Emitter Voltage22V
VEBOEmitter-Base Voltage6V
ICCollector Current -Continuous5A
PDCollector Power Dissipation750mW
R0 JAThermal Resist ance f rom Junction to Ambient166.7Š / W
TjJunction Temperature150Š
TstgSt orage Temperature-55 ~+150Š

 

 

 

 


ELECTRICAL CHARACTERISTICS

 

 

Ta=25 Š unless otherwise specified


 

 

ParameterSymbolTest conditionsMINTYPMAXUNIT
Collector-base breakdown voltageV(BR)CBOIC=0.1mA, IE=042  V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=022  V
Emitter-base breakdown voltageV(BR)EBOIE= 10µA, IC=06  V
Collector cut-off currentICBOVCB=30V,IE=0  0.1µA
Emitter cut-off currentIEBOVEB=6V, IC=0  0.1µA

 

DC current gain

hFE(1)VCE=2V, IC= 0.15 mA150   
hFE(2)VCE= 2V,IC = 500 mA340 2000 
hFE(3)VCE=2V, IC = 2A150   
Collector-emitter saturation voltageVCE(sat)IC=3000mA,IB=100 mA  0.35V
Transition frequencyfTVCE=6V, IC=50mA,f=30MHz 150 MHz

 
  

CLASSIFICATION OF hFE(2)

RankRTV
Range340-600560-950900-2000

 

 

 

 

Typical Characteristics

 

 
 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 

Product Tags: tip series transistors   high power pnp transistor  
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