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high power zener diode
Selling leads
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...High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol ...
2024-12-09 18:42:28
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...High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead ...
2024-12-09 18:50:53
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:52:33
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...High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead ...
2024-12-09 21:52:33
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...High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
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...High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol ...
2024-12-09 21:52:33
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN). FEATURE Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier ...
2024-12-09 18:42:28
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BAV19W~BAV21W SWITCHINGDIODESOD-123 SOD-123Plastic-EncapsulateDiodes FEATURE Low Reverse Current Surface Mount Package Ideally Suited for Automatic ...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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