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high power zener diode
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AOD508/AOI508 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High ...
2024-12-09 19:03:13
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AOD482/AOI482 100V N-Channel MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to ...
2024-12-09 21:52:33
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AOD508/AOI508 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High ...
2024-12-09 21:52:33
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TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN) FEATURE Power Dissipation MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol ...
2024-12-09 21:52:33
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...High Breakdown Voltage Marking :A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
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AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: ...
2024-12-09 19:11:03
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AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: ...
2024-12-09 21:52:33
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 18:42:28
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The ...
2024-12-09 18:42:28
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