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AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect Transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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Mr.David Lee
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AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect Transistor

Brand Name Hua Xuan Yang
Model Number AP30N10D
Certification RoHS、SGS
Place of Origin ShenZhen China
Minimum Order Quantity Negotiation
Price Negotiated
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Delivery Time 1 - 2 Weeks
Packaging Details Boxed
Product name High Current Transistor
Model AP30N10D
Pack TO-252-3L
Marking AP30N10D XXX YYYY
VDSDrain-Source Voltage 100V
VGSGate-Sou rce Voltage ±20V
Detailed Product Description

AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect Transistor

 

High Current Transistor types

 

MOSFETs can be of different types, including:

 

Depletion Mode: Normally ON. Applying the VGS would turn it OFF.

Enhancement Mode: Normally OFF. Applying the VGS would turn it ON.

N-channel MOSFETs: positive voltages and currents.

P-channel MOSFETs: negative voltages and currents.

Low voltage MOSFETs: BVDSS from 0 V to 200 V.

High voltage MOSFETs: BVDSS greather than 200 V.

 

High Current Transistor Features

 

VDS = 100V ID = 30A
RDS(ON) < 47mΩ @ VGS=10V

 

High Current Transistor usage

 

Battery protection
Load switch
Uninterruptible power supply

 

Package Marking and Ordering Information

 

Product IDPackMarkingQty(PCS)
AP30N10DTO-252-3LAP30N10D XXX YYYY2500

 

Absolute Maximum Ratings Tc=25unless otherwise noted

 

SymbolParameterRatingUnits
VDSDrain-Source Voltage100V
VGSGate-Source Voltage±20V
ID@TC=25℃Continuous Drain Current, V GS @ 10V 130A
ID@TC=100 ℃Continuous Drain Current, V GS @ 10V 113.5A
ID@TA=25℃Continuous Drain Current, V GS @ 10V 14.2A
ID@TA=70℃Continuous Drain Current, V GS @ 10V 13.4A
IDMPulsed Drain Current245A
EASSingle Pulse Avalanche Energy 336.5mJ
IASAvalanche Current27A
PD@TC=25 ℃Total Power Dissipation452.1W
PD@TA=25 ℃Total Power Dissipation42W
TSTGStorage Temperature Range-55 to 150
TJOperating Junction Temperature Range-55 to 150
RθJAThermal Resistance Junction-ambient 162℃/W
RθJCThermal Resistance Junction-Case 12.4℃/W
SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
△BVDSS / T JBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.098---V/℃

 

RDS(ON)

 

Static Drain-Source On-Resistance

VGS=10V , I D=20A---3847

 

VGS=4.5V , I D=15A---4050
VGS(th)Gate Threshold Voltage 1.3---2.5V
△VGS(th)VGS(th) Temperature Coefficient----5.52---mV/℃
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------10uA
VDS=80V , VGS=0V , TJ=55℃------100
IGSSGate-Source Leakage CurrentVGS=±20V , V DS=0V------±100nA
gfsForward TransconductanceVDS=5V , ID=20A---28.7---S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---1.63.2Ω
QgTotal Gate Charge (10V) ---6084 
QgsGate-Source Charge---9.714
QgdGate-Drain Charge---11.816.5
Td(on)Turn-On Delay Time ---10.421 
TrRise Time---4683
Td(off)Turn-Off Delay Time---54108
TfFall Time---1020
CissInput Capacitance ---38485387 
CossOutput Capacitance---137192
CrssReverse Transfer Capacitance---82115
ISContinuous Source Current 1,5VG=VD=0V , Force Current------22A
ISMPulsed Source Current 2,5------45A
VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
trrReverse Recovery TimeIF=20A , dI/dt=100A/µs ,---30---nS
QrrReverse Recovery Charge---37---nC
SymbolParameterConditionsMin.Typ.Max.Unit
BVDSSDrain-Source Breakdown VoltageVGS=0V , ID=250uA100------V
△BVDSS / T JBVDSS Temperature CoefficientReference to 25℃ , ID=1mA---0.098---V/℃

 

RDS(ON)

 

Static Drain-Source On-Resistance

VGS=10V , I D=20A---3847

 

VGS=4.5V , I D=15A---4050
VGS(th)Gate Threshold Voltage 1.3---2.5V
△VGS(th)VGS(th) Temperature Coefficient----5.52---mV/℃
IDSSDrain-Source Leakage CurrentVDS=80V , VGS=0V , TJ=25℃------10uA
VDS=80V , VGS=0V , TJ=55℃------100
IGSSGate-Source Leakage CurrentVGS=±20V , V DS=0V------±100nA
gfsForward TransconductanceVDS=5V , ID=20A---28.7---S
RgGate ResistanceVDS=0V , VGS=0V , f=1MHz---1.63.2Ω
QgTotal Gate Charge (10V) ---6084 
QgsGate-Source Charge---9.714
QgdGate-Drain Charge---11.816.5
Td(on)Turn-On Delay Time ---10.421 
TrRise Time---4683
Td(off)Turn-Off Delay Time---54108
TfFall Time---1020
CissInput Capacitance ---38485387 
CossOutput Capacitance---137192
CrssReverse Transfer Capacitance---82115
ISContinuous Source Current 1,5VG=VD=0V , Force Current------22A
ISMPulsed Source Current 2,5------45A
VSDDiode Forward Voltage2VGS=0V , IS=1A , TJ=25℃------1.2V
trrReverse Recovery TimeIF=20A , dI/dt=100A/µs ,---30---nS
QrrReverse Recovery Charge---37---nC

 

Note :

1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS =27A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as IDand IDM, in real applications , should be limited by total power dissipation.

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

 

Product Tags: n channel mosfet transistor   high voltage transistor  
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