China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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high frequency transistor

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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ... 2024-12-09 21:52:33
HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The ... 2024-12-09 21:52:33
AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate ... 2024-12-09 21:52:33
AOD508/AOI508 30V N-Channel AlphaMOS​ General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High ... 2024-12-09 21:52:33
MMBD4148A/SE/CC/CA SWITCHING DIODE SOT-23 Plastic-Encapsulated Diodes FEATURE Fast Switching Speed For General Purpose Switching Applications High ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4... 2024-12-09 21:52:33
TO-220-3L Plastic-Encapsulate Transistors TIP41/41A/41B/41C TRANSISTOR (NPN) FEATURE Medium Power Linear Switching Applications MAXIMUM RATINGS (Ta=25... 2024-12-09 18:42:28
TO-220-3L Plastic-Encapsulate Transistors TIP110 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low ... 2024-12-09 18:42:28
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