151 - 160 of 248
high frequency transistor
Selling leads
|
SOT-89-3L Plastic-Encapsulate Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 ...
2024-12-09 21:52:33
|
|
SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A44 ...
2024-12-09 21:52:33
|
|
SOT-23 Plastic-Encapsulate Transistors FMMT491 TRANSISTOR (NPN) FEATURE Low equivalent on-resistance Marking :491 MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
|
|
...low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from ...
2024-12-09 21:52:33
|
|
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 18:42:28
|
|
...Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 18:45:20
|
|
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic ...
2024-12-09 19:03:13
|
|
... thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters ...
2024-12-09 19:03:13
|
|
|
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 21:52:33
|
|
|
...Transistor For Power Management ESD Protested DESCRIPTION The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 21:52:33
|