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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

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Province/State:guangdong

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13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

Brand Name	Hua Xuan Yang
Model Number	13P10D
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	1000-2000 PCS
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Power Transistor
APPLICATION	Power Management
FEATURE	Excellent RDS(on)
Power mosfet transistor	Enhancement Mode Power MOSFET

Detailed Product Description

13P10D -100V Mosfet Power Transistor For Power Management ESD Protested

DESCRIPTION

The 13P10D uses advanced trench technology and design to provide excellent RDS(ON) with low gat

e charge. It can be used in a wide variety of applications. It is ESD protested.

FEATURES

VDS =-100V,ID =-13A

RDS(ON) <170m @ VGS=-10V (Typ:145m )

Super high dense cell design Advanced trench process technology Reliable and rugged

High density celldesign for ultra low on-resistance

Application

Power switch DC/DC converters

Package Marking and Ordering Information

Product ID	Pack	Marking	Qty(PCS)
13P10D	TO-252	13P10D YYWW	2500

Thermal Characteristic

Thermal Resistance,Junction-to-Case (Note 2)

RθJc

3.13

℃/W

ABSOLUTE MAXIMUM RATINGS (T_C = 25°С, unless otherwise specified)

Parameter	Symbol	Limit	Unit
Drain-Source Voltage	VDS	-100	V
Gate-Source Voltage	VGS	±20	V
Drain Current-Continuous	ID	-13	A
Drain Current-Continuous(TC=100℃)	ID (100℃)	-9.2	A
Pulsed Drain Current	IDM	-30	A
Maximum Power Dissipation	PD	40	W
Derating factor		0.32	W/℃
Single pulse avalanche energy (Note 5)	EAS	110	mJ
Operating Junction and Storage Temperature Range	TJ,TSTG	-55 To 150	℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

4. Repetitive Rating: Pulse width limited by maximum junction temperature.

5. L = 84mH, I_AS =1.4A, V_DD = 50V, R_G = 25 Ω Starting T_J = 25°C

6. I_SD ≤ 2.0A, di/dt ≤200A/μs, V_DD ≤BV_DSS, Starting T_J = 25°C

ELECTRICAL CHARACTERISTICS (T_J = 25°С, unless otherwise specified)

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V ID=-250μA	-100	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=-100V,VGS=0V	-	-	1	μA
Gate-Body Leakage Current	IGSS	VGS=±20V,VDS=0V	-	-	±10	μA
On Characteristics (Note 3)
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=-250μA	-1		-3	V
Drain-Source On-State Resistance	RDS(ON)	VGS=-10V, ID=-16A	-	145	175	mΩ
Forward Transconductance	gFS	VDS=-15V,ID=-5A	12	-	-	S
Dynamic Characteristics (Note4)
Input Capacitance	Clss	VDS=-25V,VGS=0V, F=1.0MHz	-	760	-	PF
Output Capacitance	Coss		-	260	-	PF
Reverse Transfer Capacitance	Crss		-	170	-	PF
Switching Characteristics (Note 4)
Turn-on Delay Time	td(on)	VDD=-50V,ID=-10A VGS=-10V,RGEN=9.1	-	14	-	nS
Turn-on Rise Time	tr		-	18	-	nS
Turn-Off Delay Time	td(off)		-	50	-	nS
Turn-Off Fall Time	tf		-	18	-	nS
Total Gate Charge	Qg	VDS=-50V,ID=-10A, VGS=-10V	-	25	-	nC
Gate-Source Charge	Qgs		-	5	-	nC
Gate-Drain Charge	Qgd		-	7	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)	VSD	VGS=0V,IS=-10A	-	-	-1.2	V
Diode Forward Current (Note 2)	IS	-	-	-	-13	A
Reverse Recovery Time	trr	TJ = 25°C, IF =-10A di/dt = 100A/μs(Note3)	-	35	-	nS
Reverse Recovery Charge	Qrr		-	46	-	nC
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Essentially independent of operating temperature.Notes: 1. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%.

Product Tags: n channel mosfet transistor high voltage transistor

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