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ap2344gn h mosfet transistor
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6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . ...
2024-12-09 21:52:33
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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge ...
2024-12-09 21:52:33
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HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The ...
2024-12-09 21:52:33
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
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6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such ...
2024-12-09 21:52:33
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WST3078 N&P-Ch MOSFET Description The WST3078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide ...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 18:42:28
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HXY2301-2.3A Mosfet Power Transistor Description
2024-12-09 18:44:10
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HXY2301-2.8A Mosfet Power Transistor Description
2024-12-09 18:44:10
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