231 - 240 of 278
10mr transistor mosfet module
Selling leads
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ...
2024-12-09 18:50:53
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2308 N-Channel MOSFET Product Summary VDSS= V ID= 3.0 A 60 RDS(on) 120mΩ@ 10 V < VGS = RDS(on) < 136mΩ@VGS = 4...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS 2N7002 Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 21:52:33
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60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ...
2024-12-09 21:52:33
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 18:42:28
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12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate ...
2024-12-09 18:42:28
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