China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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10mr transistor mosfet module

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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10mr transistor mosfet module

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AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ... 2024-12-09 19:03:13
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ... 2024-12-09 19:03:13
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ... 2024-12-09 19:03:13
AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design ... 2024-12-09 19:34:01
AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) ... 2024-12-09 21:52:33
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide ... 2024-12-09 21:52:33
AOD480 30V N-Channel MOSFET General Description The AOD480 uses advanced trench technology and design to provide excellent R DS(ON) with low gate ... 2024-12-09 21:52:33
AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips Description AP4434A series are from Advanced Power innovated design ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS HXY3400 N-Channel Enhancement Mode Field Effect Transistor Product Summary ID= 6.0 A VDSS=20v RDS(on) 2024-12-09 21:52:33
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