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3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

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3.13W 40A IGBT Diode Switching Transistor AP4434AGYT-HF PMPAK

Brand Name	Hua Xuan Yang
Model Number	AP4434AGYT-HF
Certification	RoHS、SGS
Place of Origin	Shenzhen, China
Minimum Order Quantity	Negotiation
Price	Negotiate
Payment Terms	Western Union, L/C, T/T
Supply Ability	10,000PCS/MONTH
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Model Number:	AP4434AGYT-HF
Type:	LOGIC ICS
Brand Name:	Original brand
Package:	DIP/SMD
Condition:	New 100% AP4434AGYT-HF
Media Available:	Datasheet

Detailed Product Description

AP4434AGYT-HF PMPAK(YT Original MOSFET/IGBT/Diode Switching/Transistor IC Chips

Description

AP4434A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The PMPAK® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Continuous Drain Current³, V_GS @ 4.5V	10.8	A
I_D@T_A=70℃	Continuous Drain Current³, V_GS @ 4.5V	8.6	A
IDM	Pulsed Drain Current¹	40	A
P_D@T_A=25℃	Total Power Dissipation³	3.13	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

hermal Data

Symbol	Parameter	Value	Unit
Rthj-c	Maximum Thermal Resistance, Junction-case	4	℃/W
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	40	℃/W

AP4434AGYT-H

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=7A	-	-	18	mΩ
		V_GS=2.5V, I_D=4A	-	-	25	mΩ
		V_GS=1.8V, I_D=1A	-	-	34	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.25	-	1	V
gfs	Forward Transconductance	V_DS=10V, I_D=7A	-	29	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+100	nA
Q_g	Total Gate Charge	I_D=7A V_DS=10V V_GS=4.5V	-	12.5	20	nC
Qgs	Gate-Source Charge		-	1.5	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	4.5	-	nC
td(on)	Turn-on Delay Time	V_DS=10V I_D=1A R_G=3.3Ω V_GS=5V	-	10	-	ns
t_r	Rise Time		-	10	-	ns
td(off)	Turn-off Delay Time		-	24	-	ns
t_f	Fall Time		-	8	-	ns
Ciss	Input Capacitance	V_G.S=0V V_DS=10V f=1.0MHz	-	800	1280	pF
Coss	Output Capacitance		-	165	-	pF
Crss	Reverse Transfer Capacitance		-	145	-	pF
R_g	Gate Resistance	f=1.0MHz	-	1.5	3	Ω

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=2.6A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time	I_S=7A, V_GS=0V, dI/dt=100A/µs	-	20	-	ns
Qrr	Reverse Recovery Charge	I_S=7A, V_GS=0V, dI/dt=100A/µs	-	10	-	nC

Notes:

1.Pulse width limited by Max. junction temperature.
2.Pulse test

3.Surface mounted on 1 in² 2oz copper pad of FR4 board, t <10sec; 210^oC/W when mounted on min. copper pad.

Product Tags: 3.13W IGBT Diode Switching Transistor 40A IGBT Diode Switching Transistor AP4434AGYT-HF MOSFET IGBT

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