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10mr transistor mosfet module
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AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the ...
2024-12-09 19:11:03
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AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD464 uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
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AP7H03DF 7A 30V DFN33 N Channel Mos Field Effect Transistor High Frequency N Channel Mos Field Effect Transistor Description: The AP7H03DF is the ...
2024-12-09 21:52:33
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... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly ...
2024-12-09 21:52:33
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)
2024-12-09 18:42:28
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SOT-23 Plastic-Encapsulate MOSFETS HXY2312 N-Channel 20-V(D-S) MOSFET Product Summary ID= 6.0 A VDSS=20v RDS(on)
2024-12-09 18:42:28
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-30V P-Channel Enhancement Mode MOSFET Description General Description: The 9435A is the single P-Channel logic enhancement mode power field effect ...
2024-12-09 18:44:10
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 18:45:20
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