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10mr transistor mosfet module
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AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ...
2024-12-09 19:03:13
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AOD486A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD486A uses advanced trench technology and design to provide ...
2024-12-09 21:52:33
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
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HXY4409 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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HXY4407 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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HXY4435 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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HXY4441 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 18:44:10
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NCE01P18D NCE P-Channel Enhancement Mode Power MOSFET
2024-12-09 18:45:20
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:52:33
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HXY4407 30V P-Channel MOSFET Description A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air ...
2024-12-09 21:52:33
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