Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

Contact Person:
Mr.Wang View Contact Details

Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness

Brand Name	zmkj
Model Number	InP
Place of Origin	CHINA
Minimum Order Quantity	3pcs
Price	by case
Payment Terms	T/T, Western Union
Supply Ability	500pcs
Delivery Time	2-4weeks
Packaging Details	single wafer package in 1000-grade cleaning room
Material	InP
growth method	vFG
SIZE	2~ 4 INCH
Thickness	350-650um
application	III-V direct bandgap semiconductor material
surface	ssp/dsp
package	single wafer box

Detailed Product Description

2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer 2 inch/3 inch/4 inch 350-650 um InP Crystal Wafer Dummy Prime Semiconductor Substrate

Shanghai Xinkehui New Materials Co. Ltd.

We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components widely used in electronics, optics, electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputatiaons.

size (mm)	Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized
Ra	Surface roughness(Ra):<=5A
Polish	Single or doubles side polished
Package	100 single or doubles side polished

It has the advantages of high electronic limit drift speed, good radiation resistance, and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave devices and integrated circuits.

Features of Inp Wafer

1. The crystal is grown by liquid-sealed straight-drawing technology (LEC), with mature technology and stable electrical
performance.
2. using X-ray directional instrument for precise orientation, the crystal orientation deviation is only ±0.5°
3. the wafer is polished by chemical mechanical polishing (CMP) technology, with surface roughness <0.5nm
4. to achieve the "open box ready to use" requirements
5. according to user requirements, special specifications product processing

Wafer Diameter(mm)	50.8±0.3	76.2±0.3	100±0.3
Thickness(um)	350±25	625±25	625±25
TTV-P/P(um)	≤10	≤10	≤10
TTv-P/E(um)	≤10	≤15	≤15
WARP(um)	≤15	≤15	≤15
OF(mm)	17±1	22±1	32.5±1
OF/IF(mm)	7±1	12±1	18±11

Description	Application	Wavelength Range
InP Based Epi-wafer	FP laser	~1310nm; ~1550nm;~1900nm
	DFB laser	1270nm~1630nm
	Avalanche photo-detector	1250nm~1600nm
	Photo-detector	1250nm~1600nm/>2.0um (InGaAs absorptive layer);<1.4μm (InGaAsP absorptive layer)

Product Name

High Purity Indium Phosphide Polycrystalline Substrate Sheet

Iron Doped Indium Phosphide Crystal

N-type and P-type Indium Phosphide Crystal

4 Inch Indium Phosphide Single Crystal Ingot

Indium Phosphide Based Epitaxial Wafer

Indium Phosphide Semiconductor Crystal Substrate

Indium Phosphide Single Crystal Substrate

Indium Antimonide Single Crystal Substrate

Indium Arsenic Single Crystal Substrate

---FAQ –

Q: Are you a trading company or manufacturer?

A: zmkj is a trading company but has a sapphire manufacturer
as a supplier of semiconductor materials wafers for a wide span of applications.

Q: How long is your delivery time?

A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not

in stock, it is according to quantity.

Q: Do you provide samples? is it free or extra?

A: Yes, we could offer the sample for free charge but do not pay the cost of freight.

Q: What are your terms of payment?

A: Payment<= 1000 USD, 100% in advance. Payment>=1000USD,
50% T/T in advance, balance before shipment.

Product Tags: Single Crystal Indium Phosphide Wafers 650um Indium Phosphide Wafers InP Semiconductor Substrate Wafers

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Single Crystal InP Indium Phosphide Wafers 350 - 650um Thickness