Beta Coefficient-Ga2O3 Gallium Oxide Wafer Doped Mg Fe3+ Square Substrate Dsp Ssp

β-Ga2O3 is a gallium oxide compound, which is a wide band gap semiconductor material. Its crystal structure belongs to the hexagonal crystal system, with high electron mobility and large band width, so it has a wide application prospect. Here are some details about β-Ga2O3:

Physical properties:

Crystal structure: hexagonal crystal system

Density: 5.88 g/cm³

Lattice constant: a = 0.121 nm, c = 0.499 nm

Melting point: 1725 °C

Refractive index: 1.9-2.5

Transparent wavelength range: 0.23-6.0μm

Electrical properties:

Band width: 4.8eV

Electron mobility: 200-600 cm²/Vs

Leakage rate: 10^ -5-10 ^-10 A/cm²

REDOX potential: 2.5V vs. NHE

Because of its wide band gap and high electron mobility, β-Ga2O3 has a wide application prospect in power electronics, photoelectronics, solar cells and other fields. Specific applications include:

Ultraviolet detectors and lasers

High power MOSFETs and Schottky diodes

High temperature sensor and potential sensor

Solar cells and LED materials

β-Ga2O3 still faces some challenges in preparation and application, such as crystal growth, impurity control, device fabrication, etc. However, with the continuous development of technology, the application prospect of β-Ga2O3 is still very broad.