251 - 256 of 256
hev silicon carbide power modules
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...lower Si IGBT turn-on losses and reduced EMI. Specification Of IDWD40G120C5XKSA1 Part Number: IDWD40G120C5XKSA1 Product: Schottky Silicon Carbide ...
2025-07-14 00:19:43
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... FETs MOSFETs Transistors TO-268-3 Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in ...
2025-07-14 00:20:07
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... MSC090SMA070S is N-Channel Power MOSFET Transistors, Fast switching speed due to low internal gate resistance (ESR). Specification Of MSC090SMA070...
2025-07-14 00:19:46
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...pin SMD package based on silicon carbide trench technology for high power applications. Specification Of IMBG65R030M1HXTMA1 Part Number IMBG65R030M...
2025-07-14 00:19:46
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...,S1Q is Silicon Carbide N-Channel MOS Transistors, Through Hole TO-3P(N). Specification Of TW070J120B,S1Q Part Number TW070J120B,S1Q Vgs (Max) ±25V...
2025-07-14 00:20:06
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... Silicon Carbide Transistors, package is TO-247-3, Through Hole. Specification Of TW140N120C,S1F Part Number TW140N120C,S1F Vgs (Max) +25V, -10V ...
2025-07-14 00:20:06
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