China Integrated Circuit Chip manufacturer
ShenZhen Mingjiada Electronics Co.,Ltd.
Shenzhen Mingjiada Electronics Co., Ltd.
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hev silicon carbide power modules

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ShenZhen Mingjiada Electronics Co.,Ltd.

City: shenzhen

Country/Region:china

Tel:86-0755-83294757

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hev silicon carbide power modules

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N-Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip​ Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, ... 2025-07-14 00:19:38
1700V N-Channel Power MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3​ Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ ... 2025-07-14 00:20:07
...Power MOSFET Transistors TO-263-8​ Product Description Of IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 SMD Compact Package SiC MOSFET, CoolSiC™ MOSFET ... 2025-07-14 00:19:33
...power MOSFET TO-263-8 Integrated Circuit Chip​ Product Description Of SCT4045DW7HRTL SCT4045DW7HRTL is 750V 31A(Tc) 93W Automotive Grade N-channel ... 2025-07-14 00:20:06
.... The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Specification Of FS820R08A6P2 Part Number ... 2025-07-14 00:19:17
...MSC180SMA120B MSC180SMA120B is Silicon Carbide N-Channel Power MOSFET Transistors, 1200V, 180mΩ SiC MOSFET, package is TO-247-4. Specification Of ... 2025-07-14 00:19:46
... including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM... 2025-07-14 00:20:07
... using advanced and innovative 3rd generation SiC MOSFET technology. Specification Of SCT070HU120G3AG Part Number: SCT070HU120G3AG Total Power ... 2025-07-14 00:19:44
... silicon carbide Power MOSFET Transistors, 900V, 12mOhm typ., 110A in an H2PAK-7 package. Specification Of SCT012H90G3AG Part Number: SCT012H90G3AG ... 2025-07-14 00:19:44
... Description Of SCTW35N65G2V SCTW35N65G2V silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC ... 2025-07-14 00:20:06
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