191 - 200 of 256
hev silicon carbide power modules
Selling leads
|
...Modules Product Description Of MSCSM70HM05CAG MSCSM70HM05CAG Silicon Carbide (SiC) Power Modules combine a formidable array of technologies into a ...
2024-12-09 22:12:14
|
|
...Modules MSCSM120HM31CTBL2NG N-Channel Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full ...
2024-12-09 22:24:04
|
|
Modules MSCSM170HM087CAG Automotive IGBT Modules 1700V 4N-Channel Mosfet Array Product Description Of MSCSM170HM087CAG MSCSM170HM087CAG is Mosfet ...
2024-12-09 22:12:14
|
|
... temperature sensor, crimping process technology, and pre coated thermal interface materials. Specification Of FF6MR12W2M1PB11BPSA1 Part Number ...
2025-07-14 00:19:17
|
|
... of circuit topologies, semiconductors including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with ...
2024-12-09 22:12:14
|
|
... device is a 1200 V, 79 A buck chopper silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120SKM31CTBL1NG Part Number MSCSM120SKM31CT...
2024-12-09 22:24:04
|
|
Discrete Semiconductor Module MSCSM170AM058CD3AG Chassis Mount Transistors Product Description Of MSCSM170AM058CD3AG MSCSM170AM058CD3AG is a 1700 V, ...
2024-12-09 22:12:14
|
|
...Silicon Carbide Modules, Chassis Mount. Specification Of FS45MR12W1M1B11BOMA1 Part Number: FS45MR12W1M1B11BOMA1 VDSS: 1200V ID Nom: 25A IDRM: 50A ...
2025-07-14 00:19:17
|
|
...Module 1200V Automotive IGBT Modules Product Description Of FF8MR12W2M1B11BOMA1 FF8MR12W2M1B11BOMA1 is 1200 V, 8 mΩ half-bridge module with ...
2025-07-14 00:19:17
|
|
...™ MOSFET, NTC, and PressFIT Contact Technology. Specification Of F415MR12W2M1B76BOMA1 Part Number F415MR12W2M1B76BOMA1 Technology Silicon Carbide ...
2025-07-14 00:19:17
|