171 - 180 of 256
hev silicon carbide power modules
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... Part Number: MSC015SDA120B Maximum Working Peak Reverse Voltage: 1200V Maximum DC Forward Current(TC = 135 °C): 17A Power Dissipation(TC = 110 °C ...
2025-07-14 00:19:42
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... 21 nC @ 18 V Vgs (Max) +23V, -7V Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ...
2025-07-14 00:20:08
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...Silicon Carbide MOSFET IMW120R350M1H Integrated Circuit Chip TO-247-3 Product Description Of IMW120R350M1H IMW120R350M1H is 1200 V CoolSiC™ Trench ...
2025-07-14 00:19:47
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... losses. Specification Of IMZA65R039M1H Part Number IMZA65R039M1H Input Capacitance (Ciss) (Max) @ Vds 1393 pF @ 400 V Technology SiCFET (Silicon ...
2025-07-14 00:19:47
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Integrated Circuit Chip MSC035SMA070B4 N-Channel MOSFETs TO-247-4 Silicon Carbide Product Description Of MSC035SMA070B4 MSC035SMA070B4 is Silicon ...
2025-07-14 00:20:07
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...Silicon Carbide MOSFET Single Tube TO-263-8 Product Description Of IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 is Silicon Carbide MOSFET Single Tube, in ...
2025-07-14 00:20:06
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Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8 Product Description Of IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 is N...
2025-07-14 00:20:06
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...Silicon Carbide MOSFETs Transistors TO-247-4 Product Description Of NVH4L060N090SC1 NVH4L060N090SC1 is 60mohm, 900V Silicon Carbide (SiC) N...
2025-07-14 00:20:06
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Silicon Carbide MOS Transistors TW107N65C,S1F N-Channel TO-247-3 650V IC Chips Product Description Of TW107N65C,S1F TW107N65C,S1F is N-Channel 650V ...
2025-07-14 00:20:06
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TO-247-3 MSC027SMA330 Silicon Carbide N-Channel Power MOSFET Transistors Product Description Of MSC027SMA330 MSC027SMA330 is an innovative option for ...
2025-07-14 00:19:38
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